International Workshop on Bulk Nitride Semiconductors - XI
PROGRAM
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The topical areas of primary interest for this workshop include:

Bulk Synthesis Methods
- Basic and Acidic Ammonothermal Growth of GaN
- Solution growth of Nitrides (in particular Na-flux of GaN)
- PVT growth of AlN
- HVPE growth of GaN, AlN, InN, Ternary Nitrides
- Emerging nitrides: ScN, BN, etc.

Devices
- Homoepitaxial lateral devices
- Vertical power devices

Cross-cutting topics
- Characterization and properties of bulk GaN
- Structural and point defects
- Doping/ impurity control
- Theory and Modeling