International Workshop on Bulk Nitride Semiconductors - XI

The topical areas of primary interest for this workshop include:

Bulk Synthesis Methods

• Basic and Acidic Ammonothermal Growth of GaN
• Solution growth of Nitrides (in particular Na-flux of GaN)
• PVT growth of AlN
• HVPE growth of GaN, AlN, InN, Ternary Nitrides
• Emerging nitrides: ScN, BN, etc.

Devices

• Homoepitaxial lateral devices
• Vertical power devices

Cross-cutting topics

• Characterization and properties of bulk GaN
• Structural and point defects
• Doping/ impurity control
• Theory and Modeling