TALKS

Invited Talks

Regular Talks

Seminars

Posters


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2017

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Ammonothermal Growth of Bulk GaN Single Crystals
S. Pimputkar
XIX International Workshop on The Physics of Semiconductor Devices (IWPSD 2017), New Delhi (India)

Progress in GaN substrates for lighting and beyond
S. Pimputkar
IEEE Photonics Conference (IPC) 2017, Orlando (U.S.A.)

Technology of Ammonothermal Growth for Gallium Nitride
S. Pimputkar
International Workshop of Crystal Growth Technology (IWCGT) 7, Potsdam (Germany)

2016

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Advances in Basic Ammonothermal Growth of Bulk Gallium Nitride Crystals
S. Pimputkar, S. Griffiths, T. F. Malkowski, S. Suihkonen, J. S. Speck, and S. Nakamura
Global Forum on Advanced Materials and Technologies for Sustainable Development (GFMAT) 2016, Toronto (Canada)

Improving growth rate and transparency of basic ammonothermal GaN crystals
S. Pimputkar, J. S. Speck, and S. Nakamura
Light Emitting Devices and Their Applications 2016 (LEDIA’16), Yokohama (Japan)

Prospects for large-area bulk GaN substrates
S. Pimputkar, J. S. Speck, and S. Nakamura
Pathway to Vertical GaN (DOE Roadmapping Meeting), Davis (U.S.A.)

2015

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Recent advances in basic ammonothermal growth of gallium nitride
S. Pimputkar, S. Griffiths, T. F. Malkowski, S. Suihkonen, J. S. Speck, and S. Nakamura
EMN Collaborative Conference on Crystal Growth (3CG) 2015, Hong Kong (China)

(KEYNOTE ADDRESS) Overview of the history and development of blue, green and white LEDs and LDs
S. Pimputkar
15th International Meeting on Information Display (IMID), Daegu (South Korea)

Basic ammonothermal growth of GaN and its growth in silver lined autoclaves
S. Pimputkar, S. Kawabata, J. S. Speck, and S. Nakamura
20th American Conference on Crystal Growth and Epitaxy (ACCGE-20), Big Sky (U.S.A.)

2014 and prior

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Basic ammonothermal growth of GaN and its growth in silver lined autoclaves
S. Pimputkar, S. Kawabata, J. S. Speck, and S. Nakamura
International Symposium on Crystal Growth and Crystal Technology (ISCGCT) 2014, Wonju (South Korea), 2014

Basic ammonothermal growth of GaN in silver lined autoclaves
S. Pimputkar, S. Kawabata, J. S. Speck, and S. Nakamura
Congress and General Assembly of the International Union on Crystallography (IUCr) 2014, Montréal (Canada), 2014

Progress in basic ammonothermal growth of GaN
S. Pimputkar, P. Von Dollen, S. Kawabata, K. Kubota, J. S. Speck, and S. Nakamura
Japanese Society of Applied Physics – Material Research Society Joint Symphosia (JSAP–MRS), Kyoto (Japan), 2013

Bulk single crystal growth of gallium nitride
S. Pimputkar, B. Bryant, P. Von Dollen, T. F. Malkowski, S. Griffiths, A. Espenlaub, D. Pagenkopf, J. S. Speck, and S. Nakamura
Materials Research Outreach Symposium (MROP) 2013, Santa Barbara (U.S.A.), 2013

Bulk GaN growth on GaN seeds of varying off–orientations from m–plane in supercritical basic ammonia
S. Pimputkar, S. Kawabata, B. Bryant, J. S. Speck, and S. Nakamura
International Workshop on Nitride semiconductors (IWN) 10, Tampa (U.S.A.), 2010


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2017

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Effect of Internal Fluid Temperatures on Gallium Nitride Growth in Supercritical Ammonia-Sodium Solutions
S. Pimputkar, S. Griffiths, J. Kearns, T.F. Malkowski, M.F. Doherty, J.S. Speck, and S. Nakamura
10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X), Espoo (Finland)

Basic Ammonothermal Growth of bulk GaN in Molybdenum Capsules
S. Pimputkar, J. S. Speck, and S. Nakamura
21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), Santa Fe (U.S.A.)

2016

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Sub-bandgap optical absorption of bulk GaN crystals
S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura
International Workshop on Nitride Semiconductors (IWN) 2016, Tampa (U.S.A.)

Decomposition of Ammonia under Ammonothermal Conditions
S. Pimputkar
1st Ammonothermal Summer School, Erlangen (Germany)

2015

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(SCENE SETTER) Decomposition and modeling of supercritical ammonia solutions with applicability towards ammonothermal conditions
S. Pimputkar
International Workshop on Bulk Nitride Semiconductors (IWBNS) 9, Wonju (South Korea)

Stability of materials in ammonothermal environments and use of a molybdenum capsule in the growth of GaN
S. Pimputkar, S. Griffiths, T. F. Malkowski, A. Espenlaub, S. Suihkonen, J. S. Speck, and S. Nakamura
International Workshop on Bulk Nitride Semiconductors (IWBNS) 9, Wonju (South Korea)

2014 and prior

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Basic ammonothermal growth of GaN in silver lined autoclaves
S. Pimputkar, S. Kawabata, J. S. Speck, and S. Nakamura
Electronic Materials Conference (EMC) 56, Santa Barbara (U.S.A.), 2014

Progress in basic ammonothermal growth of GaN
S. Pimputkar, P. Von Dollen, S. Kawabata, K. Kubota, J. S. Speck, and S. Nakamura
International Workshop on Bulk Nitride Semiconductors (IWBNS) 8, Bavaria (Germany), 2013

Ammonothermal growth of GaN
S. Pimputkar, P. Von Dollen, S. Kawabata, K. Kubota, J. S. Speck, and S. Nakamura
KAUST-UCSB-NSF Workshop on Solid-State Lighting, Thuwal (Saudi Arabia), 2012

Improved growth rates and transparency of ammonothermal GaN crystals
S. Pimputkar, J. S. Speck and S. Nakamura
International Conference on Nitride Semiconductors (ICNS) 9, Glasgow (Scotland), 2011

Bulk GaN growth on GaN seeds of varying orientations in supercritical basic ammonia
S. Pimputkar, S. Kawabata, J. S. Speck, and S. Nakamura
Electronic Materials Conference (EMC) 53, Santa Barbara (U.S.A.), 2011

Bulk GaN growth on GaN seeds of varying orientations in supercritical basic ammonia
S. Pimputkar, S. Kawabata, J. S. Speck, and S. Nakamura
International Workshop on Bulk Nitride Semiconductors (IWBNS) 7, Koyasan (Japan), 2011

Bulk GaN growth on highly vicinal m–plane GaN seeds in supercritical basic ammonia with application towards seed coarsening
S. Pimputkar, S. Kawabata, J. S. Speck, and S. Nakamura
International Symposium on Growth of III–Nitrides (ISGN) 3, Montpellier (France), 2010

Plane dependent growth of GaN by the ammonothermal method
M. Saito, D. S. Kamber, S. Pimputkar, T. J. Baker, K. Fujito, T. Hashimoto, S. P. DenBaars, J. S. Speck, and S. Nakamura
International Workshop on Bulk Nitride Semiconductors (IWBNS) 6, Galindia (Poland), 2009


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2016

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Lessons Learned – from Research and Development of bulk GaN Crystals
S. Pimputkar
Corporate Seminar (Takatori Corp.), Nara (Japan)

2015

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Bulk single crystal growth of gallium nitride
S. Pimputkar, P. Von Dollen, S. Griffiths, T. F. Malkowski, J. S. Speck, and S. Nakamura
Hong Kong University of Science and Technology (HKUST), Hong Kong (China)

2014 and prior

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Sodium flux growth of GaN
P. Von Dollen, S. Pimputkar, A. Espenlaub, S. Nakamura, and J. S. Speck
King Abdulaziz City for Science and Technology (KACST), Saudi Arabia, 2014

Basic ammonothermal growth of bulk GaN crystals
S. Pimputkar, P. Von Dollen, T. Malkwoski, S. Griffiths, A. Espenlaub, S. Moon, J. S. Speck, S. Nakamura
Nitrides Seminar, Materials Department (UCSB), 2014

Bulk GaN growth on GaN seeds of varying off-orientations from m-plane in supercritical basic ammonia
S. Pimputkar
Nitrides Seminar, Materials Department (UCSB), 2010

Bulk GaN crystal growth
S. Pimputkar
Nitrides Seminar, Materials Department (UCSB), 2009

H2 generation using III-nitrides: an overview
S. Pimputkar
Nitrides Seminar, Materials Department (UCSB), 2008


Jump to: 2014 and prior

2014 and prior

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Progress in Bulk GaN Growth
S. Pimputkar, S. Kawabata, B. Bryant, P. Von Dollen, J. S. Speck, and S. Nakamura
Engineering Insights, College of Engineering (UCSB), 2011

Hydrogen generation using InGaN, water and sunlight
S. Pimputkar, M. Iza, S. DenBaars, C. G. Van De Walle, U. Mishra, and S. Nakamura
Solid-State Lighting and Display Center, Annual Review (UCSB), 2007


Jump to: 2014 and prior

2014 and prior

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(RADIO INTERVIEW) Shocking Ideas: Blue LEDs
S. Pimputkar
Big Picture Science, 2014