PUBLICATIONS
Journal Publications
Commentary & Reviews
Book & Book Chapters
Patents & Patent Applications
Jump to: Submitted , 2021, 2020, 2019, 2018, 2016, 2015, 2014 and prior
Submitted
(Back to Top)
Properties of Titanium Zirconium Molybdenum Alloy after Exposure to Indium at Elevated Temperatures
F. Metzger, V. Rienzi, C. Mascetti, T. Nguyen, and S. Pimputkar
DOI: TBD
2021
(Back to Top)
Computational Fluid Dynamics Modeling of a New High-Pressure Chemical Vapor Deposition Reactor Design
P. Yousefian and S. Pimputkar
J. Cryst. Growth, 566-567 (2021) 126155, DOI: 10.1016/j.jcrysgro.2021.126155
2020
(Back to Top)
Enhancing student appreciation for materials science: Integration of domain specific project-based learning in an introductory materials science course
S. Jedlicka, G. Skutches, and S. Pimputkar
ASEE Conference (2020) 1-16, Page ID: 29199
2019
(Back to Top)
WIP: Integration of Peer Communication Fellows into Introductory Materials Science Courses
S. Jedlicka, G. Skutches, and S. Pimputkar
ASEE Conference (2019) 1-12, Page ID: 26714
2018
(Back to Top)
Growth kinetics of basic ammonothermal gallium nitride crystals
S. Griffiths, S. Pimputkar, J. Kearns, T.F. Malkowski, M.F Doherty, J.S. Speck, and S. Nakamura
J. Cryst. Growth, 501 (2018) 74-80, DOI: 10.1016/j.jcrysgro.2018.08.028
2016
(Back to Top)
A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes
P. Von Dollen, S. Pimputkar, M. Abo Alreesh, S. Nakamura, and J. S. Speck
J. Cryst. Growth, 456 (2016) 67-72, DOI: 10.1016/j.jcrysgro.2016.08.018
A new system for sodium flux growth of bulk GaN. Part I: System Development
P. Von Dollen, S. Pimputkar, M. Abo Alreesh, H. Albrithen, S. Suihkonen, S. Nakamura, and J. S. Speck
J. Cryst. Growth, 456 (2016) 58-66, DOI: 10.1016/j.jcrysgro.2016.07.044
On the solubility of gallium nitride in supercritical ammonia-sodium solutions
S. Griffiths, S. Pimputkar, J. S. Speck, and S. Nakamura
J. Cryst. Growth, 456 (2016) 5-14, DOI: 10.1016/j.jcrysgro.2016.08.041
Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave
T. F. Malkowski, S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura
J. Cryst. Growth, 456 (2016) 21-26, DOI: 10.1016/j.jcrysgro.2016.07.045
Basic ammonothermal GaN growth in molybdenum capsules
S. Pimputkar, J. S. Speck, and S. Nakamura
J. Cryst. Growth, 456 (2016) 15-20, DOI: 10.1016/j.jcrysgro.2016.07.034
Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN
S. Sintonen, P. Kivisaari, S. Pimputkar, S. Suihkonen, T. Schulz, J. S. Speck, and S. Nakamura
J. Cryst. Growth, 456 (2016) 43-50, DOI: 10.1016/j.jcrysgro.2016.08.040
Infrared absorption of hydrogenated gallium-vacancies in ammonothermal GaN
S. Suihkonen, S. Pimputkar and J. S. Speck
Appl. Phys. Lett., 108 (2016) 202105, DOI: 10.1063/1.4952388
2015
(Back to Top)
Stability of materials in supercritical ammonia solutions
S. Pimputkar, T. F. Malkowski, S. Griffiths, A. Espenlaub, S. Suihkonen, J. S. Speck, and S. Nakamura
J. Supercrit. Fluids, 110 (2016) 193–229, DOI: 10.1016/j.supflu.2015.10.020
In the news: Better materials promise LED’s at a fraction of the cost
Decomposition of supercritical ammonia and modeling of supercritical ammonia-nitrogen-hydrogen solutions with applicability towards ammonothermal conditions
S. Pimputkar and S. Nakamura
J. Supercrit. Fluids, 107 (2016) 17–30, DOI: 10.1016/j.supflu.2015.07.032
In the news: Advances in Engineering
Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals
S. Pimputkar, S. Suihkonen, M. Imade, Y. Mori, J. S. Speck, and S. Nakamura
J. Cryst. Growth, 423 (2015) 49–53, DOI: 10.1016/j.jcrysgro.2015.09.016
2014 and prior
(Back to Top)
Improved growth rates and purity of basic ammonothermal GaN
S. Pimputkar, S. Kawabata, J. S. Speck, and S. Nakamura
J. Cryst. Growth, 403 (2014) 7–17, DOI: 10.1016/j.jcrysgro.2014.06.017
Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane
S. Pimputkar, S. Kawabata, J. S. Speck, and S. Nakamura
J. Cryst. Growth, 368 (2013) 67–71, DOI: 10.1016/j.jcrysgro.2013.01.022
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, and S. Nakamura
Acta Mater., 61 (2013) 945–951, DOI: 10.1016/j.actamat.2012.10.042
Scintillators with potential to supersede lanthanum bromide
N. J. Cherepy, S. A. Payne, S. J. Asztalos, G. Hull, J. D. Kuntz, T. Niedermayr, S. Pimputkar, J. J. Roberts, R. D. Sanner, T. M. Tillotson, E. van Loef, C. M. Wilson, K. S. Shah, U. N. Roy, R. Hawrami, A. Burger, L. A. Boatner, W. S. Choong, and W. W. Moses
IEEE Trans. Nucl. Sci., 56 (2009) 873–880, DOI: 10.1109/TNS.2009.2020165
Jump to: Submitted, 2017, 2014 and prior
Submitted
(Back to Top)
2017
(Back to Top)
(PROGRESS REPORT) Defects in single crystalline ammonothermal gallium nitride
S. Suihkonen, S. Pimputkar, S. Sintonen, and F. Tuomisto
Adv. Electronic Mat., 3 (2017) 1600496, DOI: 10.1002/aelm.201600496
2014 and prior
(Back to Top)
(HIGHLIGHT) Let there be light-with gallium nitride: The 2014 Nobel prize in physics
P. Von Dollen, S. Pimputkar and J. S. Speck
Angew. Chem. Int. Ed., 53 (2014) 13978–13980, DOI: 10.1002/anie.201410693
(COMMENTARY) Prospects for LED lighting
S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura
Nature Photon., 3 (2009) 180–182, DOI: 10.1038/nphoton.2009.32
Jump to: 2022, 2021, 2018, 2014
Under Contract
(Back to Top)
Bulk and Thin-Film Growth Methods of Group-III Nitrides
S. Pimputkar
SPIE Press Monograph (2022), ISBN: TBD
2021
(Back to Top)
Equation of State and Ammonia Decomposition in Ammonothermal Systems
S. Pimputkar
in: Ammonothermal Synthesis and Crystal Growth of Nitrides – Chemistry and Technology
Editors: E. Meissner and R. Niewa
Springer (2021), ISBN: 978-3-030-56305-9
2018
(Back to Top)
Chapter 11: Gallium Nitride
S. Pimputkar
in: Single Crystals of Electronic Materials: Growth and Properties
Editor: R. Fornari
Elsevier (2018), ISBN: 978-0-08-102096-8
2014
(Back to Top)
Ammonothermal growth of gallium nitride: overview and advances
S. Pimputkar
Lambert Academic Publishing (2014), ISBN: 3659566934
Jump to: 2011, 2009
2011
(Back to Top)
Ammonothermal growth of group–III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other
S. Pimputkar, J. S. Speck, S. Nakamura, and S. Kawabata
Patent No. US9133564
2009
(Back to Top)
Reactor designs for use in ammonothermal growth of group–III nitride crystals
S. Pimputkar, D. S. Kamber, J. S. Speck, and S. Nakamura
Patent No. US8641823
Using boron-containing compounds, gases, and fluids during ammonothermal growth of group–III nitride crystals
S. Pimputkar, D. S. Kamber, J. S. Speck, and S. Nakamura
Patent No. US8574525
Jump to: 2021, 2018, 2016, 2015, 2014, 2013, 2012, 2011, 2009
2021
(Back to Top)
Material Synthesis via Decomposition of a Lithiated Nitrogen-containing Precursor
S. Pimputkar
US Disclosure
2018
(Back to Top)
High Pressure Spatial Chemical Vapor Deposition (HPS-CVD)
S. Pimputkar
PCT Application US 19/52667
2016
(Back to Top)
Solvothermal growth of single crystals using a single control temperature
S. Griffiths, S. Pimputkar, P. Von Dollen, and J. S. Speck
UC Case No. 2017-138
Group-III containing source material for bulk nitride solution growth
S. Griffiths, S. Pimputkar, P. Von Dollen, and J. S. Speck
UC Case No. 2017-137
System and apparatus of melt composition control for nitride crystal growth
P. Von Dollen, S. Pimputkar, D. Rehn, M. Aboalreesh, and J. Palmer
UC Case No. 2016-774
2015
(Back to Top)
Enriching or maximizing ammonia concentrations in supercritical ammonia containing solutions
S. Pimputkar
UC Case No. 2016-244
System for high temperature solution crystal growth
P. Von Dollen, S. Pimputkar, G. Patterson, D. Rehn, J. S. Speck, M. Aboalreesh, and H. Albrithen
UC Case No. 2016-243
2014
(Back to Top)
Use of molybdenum containing materials in the growth of group–III nitrides
S. Pimputkar, T. F. Malkowski and S. Nakamura
UC Case No. 2014-760
Growth of bulk gallium nitride crystals in a non-equilibrium growth environment
S. Pimputkar, S. Nakamura and J. S. Speck
UC Case No. 2014-134
Use of supercritical ammonia solutions containing alkali or alkali earth metals to remove oxides from group–III nitride containing source materials
S. Pimputkar, J. S. Speck and S. Nakamura
UC Case No. 2014-117
Use of ceramics and composite materials for the growth of group–III nitride bulk crystals
S. Pimputkar, S. Nakamura and J. S. Speck
UC Case No. 2014-116
Reactor vessels for ammonothermal and flux-based growth of group–III nitride crystals
S. Pimputkar, S. Nakamura and J. S. Speck
International Application No. WO2015031794A2
2013
(Back to Top)
Apparatus used for the growth of group-III nitride crystals utilizing carbon fiber containing materials and group–III nitride grown therewith
S. Pimputkar, P. Von Dollen, S. Nakamura, and J. S. Speck
International Application No. WO2013155188A1
Crystal growth using non-thermal atmospheric pressure plasmas
P. Von Dollen, S. Pimputkar and J. S. Speck
International Application No. WO2013109854A1
2012
(Back to Top)
Use of alkaline-earth metals to reduce impurity incorporation into a group–III nitride crystal grown using the ammonothermal method
S. Pimputkar, P. Von Dollen, J. S. Speck, and S. Nakamura
International Application No. WO2013063070A1
Method for improving the transparency and quality of group–III nitride crystals ammonothermally grown in a high purity growth environment
S. Pimputkar, S. Nakamura and J. S. Speck
International Application No. WO2013010121A1
Growth of bulk group–III nitride crystals after coating them with a group–III metal and an alkali metal
S. Pimputkar and J. S. Speck
International Application No. WO2013010118A1
Growing a group–III nitride crystal using a flux growth and then using the group–III nitride crystal as a seed for an ammonothermal re-growth
S. Pimputkar, S. Nakamura and J. S. Speck
International Application No. WO2013010117A1
2011
(Back to Top)
Group–III nitride solar cells grown on high quality group–III nitride crystals mounted on foreign material
S. Pimputkar, S. Nakamura and S. P. DenBaars
US Application No. US20120103419
Group–III nitride crystal ammonothermally grown using an initially off-oriented non-polar or semi-polar growth surface of a group–III nitride seed crystal
S. Pimputkar, J. S. Speck and S. Nakamura
International Application No. WO2011115950A1
2009
(Back to Top)
Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group–III nitride crystals
S. Pimputkar, D. S. Kamber, J. S. Speck, and S. Nakamura
International Application No. WO2010053996A1
Group–III nitride monocrystal with improved purity and method of producing the same
D. S. Kamber, S. Pimputkar, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura
International Application No. WO2010053966A1
Controlling relative growth rates of different exposed crystallographic facets of a group–III nitride crystal during the ammonothermal growth of a group–III nitride crystal
S. Pimputkar, D. S. Kamber, J. S. Speck, and S. Nakamura
International Application No. WO2010053963A1
Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group–III nitride crystals
S. Pimputkar, D. S. Kamber, J. S. Speck, and S. Nakamura
International Application No. WO2010053964A1
Group–III nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the same
S. Pimputkar, D. S. Kamber, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura
International Application No. WO2010053977A1